Body-Biased Complementary Logic Implemented Using AIN Piezoelectric MEMS Switches

This paper reports on the first implementation of low voltage complementary logic (< 1.5 V) by using bodybiased aluminum nitride (AlN) piezoelectric MEMS switches. For the first time, by using opposite body biases the same mechanical switch has been made to operate as both an ntype and p-type (complementary) device. Body-biasing also gives the ability to precisely tune the threshold voltage of a switch. The AlN MEMS switches have shown extremely small subthreshold slopes and threshold voltages as low as 0.8 mV/dec and 30 mV, respectively. Furthermore, this work presents a fully mechanical body-biased inverter formed by two AlN MEMS switches operating at 100 Hz with a ± 1.5 V voltage swing. Disciplines Engineering | Mechanical Engineering Comments Suggested Citation: Nipun Sinha, Timothy S. Jones, Zhijun Guo, and Gianluca Piazza. "Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches" Proceedings of 2009 IEEE International Electron Devices Meeting (IEDM 2009) (2009). ©2009 IEEE. Personal use of this material is permitted. However, permission to reprint/republish this material for advertising or promotional purposes or for creating new collective works for resale or redistribution to servers or lists, or to reuse any copyrighted component of this work in other works must be obtained from the IEEE. This conference paper is available at ScholarlyCommons: http://repository.upenn.edu/meam_papers/257 Body-Biased Complementary Logic Implemented Using AlN Piezoelectric MEMS Switches Nipun Sinha, Timothy S. Jones, Zhijun Guo and Gianluca Piazza 2 Department of Mechanical Engineering and Applied Mechanics, University of Pennsylvania Department of Electrical and Systems Engineering, University of Pennsylvania Philadelphia, Pennsylvania 19104, USA. E-mail: {nipun, piazza}@seas.upenn.edu